Flow path member, and heat exchanger and semiconductor manufacturing device using same

ABSTRACT

There is provided a flow path member including: a first wall section; a second wall section; and a third wall section that is provided between the first wall section and the second wall section. An internal section that is configured by the first wall section, the second wall section, and the third wall section becomes a flow path through which a fluid flows and a plurality of flow path openings of the flow path are arranged in one direction on a cut plane obtained by cutting from the first wall section to the second wall section. Furthermore, one of two adjacent flow path openings is disposed to be more displaced than the other either toward the first wall section side or toward the second wall section side.

TECHNICAL FIELD

The present invention relates to a flow path member, and a heatexchanger and a semiconductor manufacturing device using the flow pathmember.

BACKGROUND ART

In general, a flow path member that includes a flow path therein iscapable of performing heat exchange with another member that is incontact with the flow path member by causing a fluid to flow through theflow path and, thereby it is possible to regulate (control) atemperature of the another member that is in contact with the flow pathmember.

For example, PTL1 discloses a semiconductor apparatus that includes asemiconductor component which includes at least one semiconductorelement and a pair of lead frames between which the semiconductorelement is interposed and which is molded from a resin by exposing anouter surface of the lead frame, and a ceramic tube which is joined tothe outer surface of the pair of lead frames by a joining metal andincludes a refrigerant passage.

CITATION LIST Patent Literature

-   PTL 1: Japanese Unexamined Patent Application Publication No.    2008-103623

SUMMARY OF INVENTION Technical Problem

However, a problem arises in that, in the semiconductor device of PTL 1,in a case where pressure of the fluid is set to be high so as to improveheat exchange efficiency between heat generated by the semiconductorelement and a fluid which is a refrigerant flowing through therefrigerant passage, stress is concentrated between corners ofparticularly adjacent refrigerant passages and thus the refrigerantpassages are likely to be damaged.

Therefore, the present invention aims to provide a flow path member, anda heat exchanger and a semiconductor manufacturing device using the flowpath member, of which reliability is improved.

Solution to Problem

The present invention provides a flow path member including: a firstwall section; a second wall section; and a third wall section that isprovided between the first wall section and the second wall section. Aninternal section that is configured by the first wall section, thesecond wall section, and the third wall section becomes a flow paththrough which a fluid flows and a plurality of flow path openings of theflow path are arranged in one direction on a cut plane obtained bycutting from the first wall section to the second wall section. One oftwo adjacent flow path openings is disposed to be more displaced thanthe other either toward the first wall section side or toward the secondwall section side.

The present invention provides a heat exchanger including: a metalmember that is provided on at least one surface or in at least oneinterior section of the first wall section and the second wall sectionof the flow path member with the above configuration.

The present invention provides a semiconductor manufacturing deviceincluding: a heat exchanger in which a metal member is provided in atleast one interior section of the first wall section and the second wallsection of the flow path member with the above configuration and themetal member is an electrode for adsorbing a wafer.

Advantageous Effects of Invention

In the flow path member according to the present invention, the stressconcentration between corners of the adjacent flow path openings on thecut plane obtained by cutting from the first wall section to the secondwall section is reduced and it is possible to suppress the damage to theflow path. Therefore the reliability is improved.

In addition, in the heat exchanger according to the present invention,it is possible to achieve a heat exchanger which has high heat exchangeefficiency and of which the reliability is improved.

In addition, in the semiconductor manufacturing device according to thepresent invention, it is possible to achieve a semiconductormanufacturing device which is capable of manufacturing a highly reliablesemiconductor element.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is an external perspective view schematically illustrating astate of being cut from a first wall section to the second wall sectionas an example of a flow path member according to the present embodiment.

FIG. 2 is an external perspective view schematically illustrating astate of being cut from the first wall section to the second wallsection as another example of the flow path member according to thepresent embodiment.

FIG. 3 is an external perspective view schematically illustrating astate of being cut from the first wall section to the second wallsection as still another example of the flow path member according tothe present embodiment.

FIG. 4 is an external perspective view schematically illustrating astate of being cut from the first wall section to the second wallsection as still another example of the flow path member according tothe present embodiment, (a) illustrates an example in which the flowpaths are displaced gradually closer to the first wall section sideapproaching the center than at the opposite ends, and (b) illustrates anexample in which the flow paths are displaced gradually closer to thesecond wall section side approaching the center than at the oppositeends.

FIG. 5 is an external perspective view schematically illustrating astate of being cut from the first wall section to the second wallsection as still another example of the flow path member according tothe present embodiment.

FIG. 6 shows cross-sectional views illustrating a cross section inparallel to the first wall section and the second wall section as stillanother example of the flow path member according to the presentembodiment, (a) is a meandering flow path, and (b) is a spiraling flowpath.

FIG. 7 is a view illustrating an example of a semiconductormanufacturing device including the heat exchanger according to thepresent embodiment.

DESCRIPTION OF EMBODIMENTS

Hereinafter, examples of a flow path member according to the embodimentof the present invention will be described.

FIG. 1 is an external perspective view schematically illustrating astate of being cut from a first wall section to the second wall sectionas an example of a flow path member according to the present embodiment.The same configuration in the following drawings is described by thesame reference signs.

A flow path member 10 according to the present embodiment illustrated inFIG. 1 includes a first wall section 1, a second wall section 2, and athird wall section 3 that is provided between the first wall section 1and the second wall section 2. An internal section that is configured bythe first wall section 1, the second wall section 2, and the third wallsection 3 becomes a flow path through which a fluid flows and aplurality of flow path openings 4 of the flow path are arranged in onedirection on a cut plane obtained by cutting from the first wall section1 to the second wall section 2 (hereinafter, simply referred to as a cutplane). Here, it is preferable that a cross-sectional shape of the flowpath opening 4 be a polygon and particularly a square.

In the flow path member 10 according to the present embodiment, one flowpath opening 4 a of two adjacent flow path openings 4 a and 4 b isdisposed to be more displaced than the other flow path opening 4 beither toward the first wall section 1 side or toward the second wallsection 2 side.

Thus, since a distance between corners of adjacent flow path openings 4(in other words, adjacent flow paths on the cut plane) becomes long andstress concentration occurring between the corners of the adjacent flowpaths can be reduced, it is possible to suppress damage to the flowpath. Thus, reliability of the flow path member 10 is improved. In theflow path member 10 according to the present embodiment, the flow pathmay be configured to have a plurality of flow paths, further may beconfigured to have one flow path as a whole, and a plurality of the flowpath openings 4 may be arranged in one direction on an arbitrary cutplane. Accordingly, hereinafter, when there is no specific description,in description of adjacent flow path openings 4 on the cut plane, theflow paths are adjacent in some cases.

Here, in a method of measuring a length of displacement of the flow pathopenings 4 from each other, the cross-sectional shape illustrated inFIG. 1 is described as an example. First, with a flow path opening 4that is closest to a main surface 1 a of the first wall section 1 or amain surface 2 a of the second wall section 2 as a reference, the lengthof displacement of the other flow path openings 4 may be measured. To bemore exact, according to FIG. 1, with the second flow path opening 4from the left which is closest to the main surface 2 a side as areference, differences from the other flow path openings 4 may bemeasured. Here, when a perpendicular line to the main surface 2 a isdrawn from the main surface 2 a to the center on a line connecting theopposite corners of each of the flow path openings 4 in a widthdirection on the second wall section 2 side, a difference of thedistances of the flow path openings 4 is the length of the displacement.It is possible to measure the length of the displacement on the cutplane of the flow path member 10 using a known optical microscope,microscope, or the like. In order to reduce the stress concentrationbetween the corners of the adjacent flow path openings 4, it ispreferable that 0.01 mm or more of the length of the displacement besecured. In addition, in the flow path member 10 illustrated in FIG. 1,the displacement of the flow path means the displacement of the flowpath in a direction either toward the first wall section 1 side ortoward the second wall section 2 side and the same is true for thefollowing drawings.

Here, the flow path member 10 is assumed to be a flow path through whicha highly corrosive gas or liquid flows, and thus it is preferable thatthe flow path member 10 be formed of ceramics such that the flow pathmember 10 has a good durability or corrosion resistance and is good ininsulation. The material examples of the ceramics can include alumina,zirconia, silicon nitride, aluminum nitride, silicon carbide,cordierite, boron carbide, mullite, or a compound thereof.

Particularly, it is preferable that the flow path member 10 according tothe present embodiment be formed of a silicon carbide sintered body withsilicon carbide as a main component. Here, the main component means acomponent which is 80% by weight or more with respect to 100% by weightof the entire components that configures a sintered body. When the flowpath member 10 according to the present embodiment is formed of thesilicon carbide sintered body with the silicon carbide as the maincomponent, the flow path member 10 has high thermal conductivity inaddition to the good durability or corrosion resistance, and thus theheat exchange efficiency is improved. In addition, since the siliconcarbide sintered body has lower specific gravity than other ceramics,for example, alumina, it is possible to achieve a light weight in a casewhere a large-sized flow path member 10 is needed.

Samples with predetermined sizes are cut out from the flow path member10 and it is possible to check the components of the flow path member 10by an X-ray diffraction method. In addition, it is possible to check thecontent through performing an energy dispersive X-ray (EDS) analysis bya scanning electron microscope (SEM). In addition, it is possible tocheck the content by an ICP emission spectrometry or an X-rayfluorescence spectrometry.

FIG. 2 is an external perspective view schematically illustrating astate of being cut from the first wall section to the second wallsection as another example of the flow path member according to thepresent embodiment.

In the flow path member 20 according to the present embodimentillustrated in FIG. 2, for all of the plurality of flow path openings 4on the cut plane, one of the adjacent flow path openings 4 is disposedto be more displaced either toward the first wall section 1 side ortoward the second wall section 2 side than the other. That is, in theflow path member 20 illustrated in FIG. 2, when the flow path openings 4a and 4 b are viewed, the flow path opening 4 b is displaced toward thefirst wall section 1 side, when the flow path openings 4 b and 4 c areviewed, the flow path opening 4 c is displaced toward the first wallsection 1 side, when the flow path openings 4 c and 4 d are viewed, theflow path opening 4 d is displaced toward the first wall section 1 side,and when the flow path openings 4 d and 4 e are viewed, the flow pathopening 4 e is displaced toward the first wall section 1 side.

According to such a configuration, it is possible to further reduce thestress concentration between the corners of all the adjacent flow pathson the cut plane. Thus, since it is possible to further suppress damageto the flow path, it is possible to further improve the reliability ofthe flow path member 20.

FIG. 3 is an external perspective view schematically illustrating astate of being cut from the first wall section to the second wallsection as still another example of the flow path member according tothe present embodiment.

In the flow path member 30 according to the present embodimentillustrated in FIG. 3, a central portion of at least one of the firstwall section 1 and the second wall section 2 which configures the flowpath is curved toward the flow path side. FIG. 3 illustrates an examplein which both central portions of the first wall section 1 and thesecond wall section 2 are curved toward the flow path side.

According to such a configuration, it is possible to widen a surfacearea of the flow path. Thus, it is possible to improve the heat exchangeefficiency between the member as the heat exchange target and a fluid.Further, for example, in FIG. 3, an angle θ on a corner portion betweenthe first wall section 1 and the third wall section 3 in the flow pathis an acute angle. Therefore, compared to a case where the centralportion of the first wall section 1 or the second wall section 2 whichconfigures the flow path is not curved toward the flow path, it ispossible to cause a direction of the stress produced on the corner notto be toward the corner of the adjacent flow path but to be toward thefirst wall section 1 side. Accordingly, the stress concentration betweenthe corners of the adjacent flow paths is reduced and it is possible tosuppress damage to the flow path. Therefore, the reliability of the flowpath member 30 is improved.

The central portion described here indicates a center part when thewidth of the flow path opening 4 is equally divided into three parts onthe cut plane. In addition, a degree of the curvature of the first wallsection 1 or the second wall section 2 toward the flow path isrepresented, for example, by a distance from a line connecting cornersof the flow path opening 4 on the first wall section 1 side to eachother to an end of a perpendicular line at a portion where the firstwall section 1 is curved most toward the flow path side as illustratedby the portion A illustrated in FIG. 3. It is possible to measure thedegree of the curvature on the cut plane of the flow path member 30using the known optical microscope or microscope. It is preferable thatthe degree of the curvature be 0.01 mm or more in order for thedirection of the stress to be toward the first wall section 1 or thesecond wall section 2.

In addition, it is preferable that the flow path opening 4 be formed tobe within a range of 80% to 99.8% with respect to a height of the flowpath opening 4 (distance between the center of a line connecting cornerson the first wall section 1 side in the width direction and the centerof a line connecting corners on the second wall section 2 side in thewidth direction in a single flow path opening 4).

FIG. 4 is an external perspective view schematically illustrating astate of being cut from the first wall section to the second wallsection as still another example of the flow path member according tothe present embodiment, (a) illustrates an example in which the flowpaths are displaced gradually closer to the first wall section sideapproaching the center than at the opposite ends, and (b) illustrates anexample in which the flow paths are displaced gradually closer to thesecond wall section side approaching the center than at the oppositeends.

In the flow path member 40 according to the present embodimentillustrated in FIG. 4, when all of the plurality of flow path openings 4on the cut plane are viewed, the flow path openings 4 are disposed to bedisplaced gradually closer either to the first wall section 1 side orthe second wall section 2 side approaching the center than at oppositeends. According to such a configuration, it is possible to reduce thestress concentration between the corners of the adjacent flow paths inall of the flow paths, and to suppress damage to the flow paths. Whenthe temperature is distributed differently throughout the member as theheat exchange target, it is possible to cause the temperature to benearly uniformly distributed.

For example, in a case where the member as the heat exchange target isprovided on the first wall section 1 and the temperature of the memberis higher at the central portion side than at the periphery, asillustrated in FIG. 4( a), the flow path openings 4 a to 4 c on the cutplane may be disposed to be displaced gradually closer to the first wallsection 1 side approaching the center than at the opposite ends. In thiscase, it is possible to reduce the temperature of the member on thecentral portion side by causing a fluid which is low in temperature toflow through the flow path and it is possible to cause the temperatureto be nearly uniformly distributed throughout the member.

Meanwhile, for example, in a case where the member as the heat exchangetarget is provided on the first wall section 1 and the temperature ofthe member is higher at the periphery than at the central portion, asillustrated in FIG. 4( b), the flow path openings 4 a to 4 c on the cutplane may be disposed to be displaced gradually closer to the secondwall section 2 side approaching the center than at the opposite ends. Inthis case, it is possible to reduce the temperature of the member at theperiphery side by causing a fluid which is low in temperature to flowthrough the flow path and it is possible to cause the temperature to benearly uniformly distributed throughout the member.

FIG. 5 is an external perspective view schematically illustrating astate of being cut from the first wall section to the second wallsection as still another example of the flow path member according tothe present embodiment.

In the flow path member 50 according to the present embodimentillustrated in FIG. 5, when all of the plurality of flow path openingson the cut plane are viewed, the flow path openings 4 a and 4 b aredisposed to be displaced toward the first wall section 1 side or towardthe second wall section 2 side alternately. According to such aconfiguration, it is possible to reduce the stress concentration betweenthe corners of all the adjacent flow paths. Thus, since it is possibleto suppress damage to the flow path, it is possible to improve thereliability of the flow path member 50. Further, it is possible to causephysical behavior to be dispersed from the main surface 1 a of the firstwall section 1 or from the main surface 2 a of the second wall section 2of the flow path member 50. Thus, since stress concentration due to anexternal factor is lowered and hence it is possible to suppress damageto the flow path, it is possible to improve the reliability of the flowpath member 50.

FIG. 6 shows cross-sectional views illustrating a cross section inparallel to the first wall section and the second wall section as stillanother example of the flow path member according to the presentembodiment, (a) is a meandering flow path, and (b) is a spiraling flowpath.

In the flow path member 60 according to the present embodimentillustrated in FIG. 6, a plurality of flow paths arranged in onedirection on the cut plane is connected in the flow path member 60 andforms one flow path.

For example, when one inlet is provided and a fluid is distributed to aplurality of flow paths, the fluid is likely to flow through a flow pathwhere pressure to the fluid is low, and thus there is a concern thatheat exchange is performed unevenly. On the other hand, as illustratedin FIG. 6, when the flow paths are formed to be connected in the flowpath member 60 as a single flow path, it is possible to cause the fluidto flow efficiently through the entire flow path. Accordingly, it ispossible to improve the heat exchange efficiency between the member asthe heat exchange target and the fluid. In addition, when the flow pathis formed as a meandering flow path 5 illustrated in FIG. 6( a) or as aspiraling flow path 6 illustrated in FIG. 6( b), it is possible to causethe fluid to stay longer inside the flow path member 60. Therefore, itis possible to perform heat exchange efficiently.

In addition, a metal member is provided on at least one surface or in atleast one interior section of the first wall section 1 and the secondwall section 2 of the flow path members 10, 20, 30, 40, 50, and 60according to the present embodiment, and thereby a heat exchanger can beformed.

In such a heat exchanger, when a heat generating member is disposed onthe main surface 1 a or on the main surface 2 a on which the metalmember is provided, heat produced by the heat generating member istransmitted efficiently to the metal member, and the transmitted heat isfurther transmitted to the wall sections. Thus, it is possible toefficiently perform heat exchange with the fluid flowing through theflow path. Since the flow path members 10, 20, 30, 40, 50, and 60according to the present embodiment are highly reliable, the heatexchanger also becomes high in reliability. The heat exchanger accordingto the present embodiment is particularly effective in a case where anelectronic component is disposed, which includes a heat generating unitsuch as an LED element or a power semiconductor as the heat generatingmember.

FIG. 7 is a view illustrating an example of a semiconductormanufacturing device including the heat exchanger according to thepresent embodiment.

In the example, the semiconductor manufacturing device 200 is a plasmaprocessing device of a wafer W, and the wafer W is mounted on a heatexchanger 100 in which a metal member 11 is provided in the interiorsection of the first wall section 1 of the flow path members 10, 20, 30,40, 50, and 60 according to the present embodiment. In the flow pathmembers 10, 20, 30, 40, 50, and 60, an inlet 62 is connected to a supplytube 64, an outlet 63 is connected to a discharge tube 65, a fluid suchas a gas or a liquid which is high or low in temperature is caused tocirculate through the flow path provided in the flow path members 10,20, 30, 40, 50, and 60, and thereby heating or cooling of the wafer W isperformed.

In addition, an upper electrode 12 for generating plasma is providedabove the wafer W, the metal member 11 in the interior section of thefirst wall section 1 of the flow path members 10, 20, 30, 40, 50, and 60which configure the heat exchanger 100 is used as a lower electrode forgenerating plasma, a voltage is applied between the metal member 11which is the lower electrode and the upper electrode 12, and thereby itis possible to cause plasma generated between the metal member 11 whichis the lower electrode and the upper electrode 12 to be in contact withthe wafer W. Since the heat exchanger 100 includes the flow path members10, 20, 30, 40, 50, and 60 according to the present embodiment, it ispossible to maintain the temperature of the metal member 11 as the lowerelectrode which becomes high in temperature during the plasma process tobe stable. In addition, since the temperature of the wafer W is alsocontrolled, it is possible to perform a highly dimension-accurateprocess. In addition, the metal member 11 of the semiconductormanufacturing device 200 may be divided into a plurality of members andmay be formed to be a bipolar electrode which has one electrode and theother electrode.

In addition, FIG. 7 illustrates an example in which the metal member 11is used as the lower electrode for generating plasma; however, when themetal member 11 is heated by a current flowing therein, it is possibleto control the temperature of the fluid.

Further, the first wall section 1 is formed of a dielectric material,then the metal member 11 is used as an electrode for electrostaticadsorption, and, when a voltage is applied to the metal member 11, it ispossible to adsorb and hold the wafer W with an electrostatic adsorptionforce such as the Coulomb force or the Johnson Rahbeck force which isgenerated between the wafer W and the dielectric layer.

Thus, since the heat exchanger 100 according to the present embodimentincludes the metal member 11 provided in the interior section of atleast one of the first wall section 1 and the second wall section 2 ofthe flow path members 10, 20, 30, 40, 50, and 60 according to thepresent embodiment which are highly reliable, it is possible to achievethe heat exchanger 100 that is high in heat exchange efficiency and inreliability and thus that is durable in a long-term use.

Since the flow path members 10, 20, 30, 40, 50, and 60 according to thepresent embodiment is good in durability and corrosion resistance, highin reliability, and high in heat exchange efficiency as described above,the semiconductor manufacturing device 200 including the flow pathmembers according to the present embodiment is capable of performing asan appropriate semiconductor manufacturing device which has littletrouble when manufacturing or monitoring the semiconductor element. Inaddition, examples of the semiconductor manufacturing device 200according to the present embodiment include, in addition to the plasmaprocessing device illustrated in FIG. 7 as an example thereof, asputtering device, a resist applying device, a CVD device or an etchingprocess device, and when these devices include the flow path members 10,20, 30, 40, 50, and 60 according to the present embodiment, it ispossible for these device to achieve the above effect.

Hereinafter, an example of a method of manufacturing the flow pathmember according to the present embodiment will be described. Thefollowing description is provided without reference signs for the flowpath member except that the component is specialized as the aspectillustrated in FIGS. 1 to 6.

First, in manufacturing the flow path member, a process is described, inwhich, after obtaining molded bodies of the first wall section 1 and asubstrate (hereinafter, also simply referred to as a substrate) having aconcave section which is integrally formed of the second wall section 2and the third wall section 3, the first wall section 1 and the substrateare joined by a joining material, and thereby a molded body to becomethe flow path member is obtained.

A ceramic raw material of which a degree of purity is 90% or more and anaverage particle size is about 1 μm is prepared, a predetermined amountof a sintering additive, a binder, and a solvent, a dispersant and thelike are added to the ceramic raw material, the mixed slurry isspray-dried and granulated using a spray granulation method(spray-drying method), and then a primary raw material is obtained.Next, the spray-dried and granulated primary raw material is put into apredetermined shape of a rubber die, molded by an isostatic pressingmethod (rubber-pressing method), then the molded body is removed fromthe rubber die, and a cutting process is performed.

During the cutting process, the molded body to become the substrate isprocessed to form a concave portion which configures an externalappearance or a flow path into a predetermined shape and forms an inletand an outlet of the fluid. Next, as the molded body to become the firstwall section 1 of the flow path member, a green sheet may be prepared bybeing manufactured by the isostatic pressing method, a doctor blademethod which is a common molding method of ceramics using slurry, or aroll compaction molding method after granulating the slurry. The cuttingprocess is performed such that the molded body is fit into the moldedbody to become the substrate so as be able to provide a flow path.

Next, a process of joining the molded body to become the first wallsection 1 to the molded body to become the substrate will be described.As the joining material to be used for joining, a joining materialformed of slurry can be used, which is obtained by weighing and mixingthe ceramic raw material, the sintering additive, the binder, thedispersant and the solvent which are used for manufacturing the moldedbody to become the first wall section 1 and the molded body to becomethe substrate. The joining material is applied to at least one joiningportion of the molded body to become the first wall section 1 and themolded body to become the substrate and the two molded bodies are joinedto each other, and thereby a joined molded body is obtained, in whichthe molded body to become the first wall section 1 and the molded bodyto become the substrate are joined integrally. The joined molded body isfired in an atmosphere in accordance with the ceramic raw material andthereby it is possible to obtain the flow path member according to thepresent embodiment.

In addition, in another example of a manufacturing method, the moldedbody to become the first wall section 1 and the molded body to becomethe substrate are fired in an atmosphere in accordance with the ceramicraw material such that sintered bodies of the first wall section 1 andthe substrate are obtained. Then, a joining material made of glass isapplied on at least one joining portion of the sintered bodies of thefirst wall section 1 and the substrate such that the sintered bodies areintegrally joined, then a heating process is performed, and thereby itis possible to obtain the flow path member according to the presentembodiment.

Next, a method of manufacturing the flow path member by an extrusionmolding method will be described.

After a die with a desired shape is prepared and a molded body to becomethe flow path member is obtained by a known extrusion molding method,the flow path member can be formed to include a plurality of inlets andoutlets by being fired.

In addition, as another example of a process of obtaining a molded body,a green sheet is formed by the doctor blade method which is a commonmolding method of ceramics using slurry or by the roll compactionmolding method after granulating the slurry, and the molded bodiesformed into a desired shape by a die may be stacked.

For example, as one example, as a method of producing the slurry, first,silicon carbide powder of which an average particle size is 0.5 μm to 2μm and boron carbide and carboxylate as a sintering additive areprepared. The powders are weighed to contain, for example, 0.12% byweight to 1.4% by weight of the boron carbide powder, 1% by weight to3.4% by weight of the carboxylate powder with respect to 100% by weightof the silicon carbide powder and then are mixed.

Next, the mixed powder, polyvinyl alcohol, polyethylene glycol, bindersuch as an acrylic resin or a butyral resin, water, and dispersant areput into a ball mill, a tumbling mill, a vibration mill, or a bead milland are mixed. Here, an added amount of the binder is determined suchthat the molded body has appropriate strength or flexibility and duringfiring, attachment and detachment of binder for molding is sufficient,and the slurry produced as described above may be used.

The slurry produced as described above is used and a green sheet may bemanufactured by the doctor blade method, or after the slurry isgranulated, a green sheet may be manufactured by the roll compactionmethod. The plurality of green sheets may be stacked to form a desiredflow path.

In addition, the same slurry as that used for manufacturing the greensheet is applied, as a joining, material on the joining surfaces of thegreen sheets, the green sheets are stacked, pressed by pressure ofsubstantially 0.5 MPa through a flat plate-like pressurizer and then, isdried at room temperature of substantially 50° C. to 70° C. forsubstantially 10 hours to 15 hours.

Next, the stacked green sheets to become the flow path member are firedin, for example, a known pusher-type or roller-type continuous tunnelfurnace and a batch furnace. A temperature for firing is differentdepending on the materials. For example, when silicon carbide is a maincomponent, the stacked green sheets may be maintained in an inert gasatmosphere or in a vacuum atmosphere, at a temperature range of 1800° C.to 2200° C. for 10 minutes to 10 hours, and then may fired at atemperature range of 2200° C. to 2350° C. for 10 minutes to 20 hours.

In addition, as another method, for example, during the firing, themolded body obtained by any manufacturing method described above ismounted on a shelf which has a bow-like slope, or a weight which has abow-like slope is placed on the molded body. In this way, the moldedbody is fired in a state in which the molded body is bent, and the firstwall section 1 side and the second wall section 2 side are subjected toa grinding process or a polishing process such that the positiondisplacement of the flow path may be changed with respect to the mainsurfaces 1 a and 3 a of the flow path member.

Here, for example, in order to form the metal member 11 on at least oneof the first wall section 1 and second wall section 2 of the flow pathmember, aluminum or copper may be formed by a known printing method, orformed by an evaporation method, an aluminum plate or a copper plate maybe joined using an active metal method or a brazing method, or a holemay be formed on a first lid section 1 and the hole may be filled withaluminum or copper. It is possible to obtain the heat exchanger 100 byforming as described above.

The flow path member according to the present embodiment obtained asdescribed above has flow paths of which adjacent flow paths arepositioned to be displaced toward the first wall section 1 or toward thesecond wall section 2, and thereby the stress concentration between thecorners of the adjacent flow paths is reduced. Thus, since the flow pathis unlikely to be damaged, it is possible to obtain the flow path memberof which the reliability is improved. In addition, particularly, thesemiconductor manufacturing device 200 includes the heat exchanger 100that has the flow path member according to the present embodiment, andthereby it is possible to perform manufacturing or examining of thehighly reliable semiconductor element.

REFERENCE SIGNS LIST

-   -   1 FIRST WALL SECTION    -   1 a MAIN SURFACE OF THE FIRST WALL SECTION    -   2 SECOND WALL SECTION    -   2 a MAIN SURFACE OF THE SECOND WALL SECTION    -   3 THIRD WALL SECTION    -   4, 4 a, 4 b, 4 c, 4 d, 4 e FLOW PATH OPENING    -   5, 6 FLOW PATH    -   10, 20, 30, 40, 50, 60 FLOW PATH MEMBER    -   61 WAFER    -   62 INLET    -   63 OUTLET    -   64 SUPPLY TUBE    -   65 DISCHARGE TUBE    -   100 HEAT EXCHANGER    -   200 SEMICONDUCTOR MANUFACTURING DEVICE

1. A flow path member comprising: a first wall section; a second wallsection; and a third wall section that is provided between the firstwall section and the second wall section, wherein an internal sectionthat is configured by the first wall section, the second wall section,and the third wall section becomes a flow path through which a fluidflows and a plurality of flow path openings of the flow path arearranged in one direction on a cut plane obtained by cutting from thefirst wall section to the second wall section, and wherein one of twoadjacent flow path openings is disposed to be more displaced than theother either toward the first wall section side or toward the secondwall section side.
 2. The flow path member according to claim 1,wherein, among all of the plurality of flow path openings on the cutplane, one of two adjacent flow path openings is disposed to be moredisplaced than the other either toward the first wall section side ortoward the second wall section side.
 3. The flow path member accordingto claim 1, wherein the central portion of at least one of the firstwall section and the second wall section that configures the flow pathis curved toward the flow path side.
 4. The flow path member accordingto claim 1, wherein the flow path openings are disposed to be displacedgradually closer either to the first wall section side or to the secondwall section side approaching the center than at the opposite ends whenall of the plurality of flow path openings on the cut plane are viewed.5. The flow path member according to claim 1, wherein the flow pathopenings are disposed to be displaced toward the first wall section sideor toward the second wall section side alternately when all of theplurality of flow path openings on the cut plane are viewed.
 6. A heatexchanger comprising: a metal member that is provided on at least onesurface or in at least one interior section of the first wall sectionand the second wall section of the flow path member according toclaim
 1. 7. A semiconductor manufacturing device comprising: a heatexchanger in which a metal member is provided in at least one interiorsection of the first wall section and the second wall section of theflow path member according to claim 1 and the metal member is anelectrode for adsorbing a wafer.